RF4E080GN Datasheet PDF

RF4E080GN Nch 30V 8A Middle Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 30V 17.6mΩ ±8A 2W lFeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. lOutline DFN2020-8S HUML2020L8 lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*1 VGSS IAS*2 EAS*2 PD*3 Tj Tstg 30 ±8 ±32 ±20 2.5 2.75 2 150 -55 to +150 Embossed Tape 180 8 3000 TR HC Unit V A A V A mJ W ℃ ℃ © 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160212 - Rev.002 RF4E080GN lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Min.