RF501B2S Datasheet PDF

Fast Recovery Diode RF501B2S zApplications General rectification zDimensions（Unit : mm ） zLand size figure(Unit : mm) 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer 1.6 1.6 CPD 2.3 2.3 zStructure (2) (1) (3) zTaping specifications(Unit : mm) Limits Symbol 200 VRM 200 VR 5 Io 40 IFSM 150 Tj -55～+150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128°C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc)(*1 Junction temperature Storage temperature zAbsolute maximum ratings (Ta=25°C) Parameter Unit V V A A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - Typ. 0.86 0.015 15 Max. 0.92 1 30 Unit V µA ns Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - R...