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RF501B2S - Fast Recovery Diode

Key Features

  • 1)Power mold type. (CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer 1.6 1.6 CPD 2.3 2.3 zStructure (2) (1) (3) zTaping specifications(Unit : mm) Limits Symbol 200 VRM 200 VR 5 Io 40 IFSM 150 Tj -55～+150 Tstg (.
  • 1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128°C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (.
  • 1) Forward current surge peak (60Hz / 1cyc)(.

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Datasheet Details

Part number RF501B2S
Manufacturer ROHM
File Size 486.03 KB
Description Fast Recovery Diode
Datasheet download datasheet RF501B2S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Fast Recovery Diode RF501B2S zApplications General rectification zDimensions（Unit : mm ） zLand size figure(Unit : mm) 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer 1.6 1.6 CPD 2.3 2.