ROHM Semiconductor RF601BGE2D
Super Fast Recovery Diode
| Part No. | RF601BGE2D |
|---|---|
| Datasheet | RF601BGE2D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1) Cathode common dual type ROHM : TO-252GE JEITA : - 2) Low switching loss 3) Low forward voltage●Taping specifications (Unit : mm)
●Construction Silicon epitaxial planar type TO-252 2.3 2.3
●Structure Cathode Anode Anode
●Absolute maximum ratings (at Tc= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage Average rectified foward current Peak forward surge current Junction temperature VR Io IFSM Tj Reverse direct voltage 60Hz half sin waveform, resistive load 1/2 Io per diode, Tc=109°CMax 60Hz half sin waveform, non-repetitive, Tj=25°C, per diode - 200 V 6A 60 A 150 °C Storage temperature Tstg - 55～150 °C
●Electrical characteristics (at Tj= 25°C unless otherwise specified, per diode) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current Reverse recovery time VF IF=3A - 0.87 0.93 V IR VR=200V - - 10 A trr IF=0.5A,IR=1A,Irr=0.25×IR - 14 25 ns Thermal resistance(1) (1) Value is guaranteed by design Rth(j-c) Junction to case - - 6 °C / W © 2020 ROHM Co., Ltd.
