ROHM Semiconductor RF601BM2DFH
Super Fast Recovery Diode
| Part No. | RF601BM2DFH |
|---|---|
| Datasheet | RF601BM2DFH Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1) Cathode common dual type 2) Low switching loss 3) Low forward voltage ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date●Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1
●Construction Silicon epitaxial planar type TL 1.6 1.6 TO-252 2.3 2.3
●Structure Cathode φ1.55±0.1 1. 5 5 00.1 Anode Anode 0.4±0.1 2.5±0.1 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 φ3.30.00±.10.1 2.7±0.2
●
ABSOLUTE MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage Average rectified foward current Forward current surge peak Operating junction temperature VR Io IFSM Tj Direct voltage 60Hz half sin wave , Resistive load 1/2Io per diode Tc=109°C 60Hz half sin wave, Non-repetitive at Tj=25°C, per diode - 200 6 60 150 V A A °C Storage temperature Tstg - 55 to 150 °C●
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, per diode) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current...
