ROHM Semiconductor RF6C055BC
Power MOSFET
RF6C055BC Pch -20V -5.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -20V 25.8mΩ ±5.5A 1.0W lFeatures 1) Low on - resistance. 2) High Power small mold Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline SOT-363T TUMT6 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Load switch Taping code TCR Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) CD Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Continuous drain current ID*1 ±5.5 A Pulsed drain current IDP*2 ±18 A Gate - Source voltage VGSS ±8 V Power dissipation PD*3 1.0 W PD*4 0.91 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 RF6C055BC lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 RthJA*4 Values Min.