ROHM Semiconductor RFN10T2D
Super Fast Recovery Diode
| Part No. | RFN10T2D |
|---|---|
| Datasheet | RFN10T2D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●
FEATURES
1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss●Construction Silicon epitaxial planer
●Dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 RFN10 T2D ① 1.2 ① 5.0±0.2 14.0±0.5 13.5MIN 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5
●Structure
●Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.5 Limits 200 Direct voltage 200 60Hz half sin wave, Resistance load, Tc=122°C 1/2Io at per diode 10 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C 80 150 55 to 150 Unit V V A A C C
●Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal Resistance Rth(j-c) * per diode Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ.
