ROHM Semiconductor RFN1L7S
Super Fast Recovery Diode
MAXIMUM RATINGS
(Tl= 25°C) Parameter Symbol 4.0±0.1 fφ 1.55 2.8MAX Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 700 V Reverse voltage VR Direct voltage Average current Io On glass epoxy substrate, 60Hz half sin wave , Resistive load Tl=115ºC Non-repetitive forward surge current IFSM 60Hz half sin wave, Non-repetitive at Tj=25ºC 700 0.8 15 V A A Operating junction temperature Tj - 150 °C Storage temperature Ts