ROHM Semiconductor RFN1LAM7STF
Super Fast Recovery Diode
| Part No. | RFN1LAM7STF |
|---|---|
| Datasheet | RFN1LAM7STF Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification PMDTM●
FEATURES
1) Low forward voltage 2) Low switching loss●Construction Silicon epitaxial planar type (2) 1.50±0.20 0.95±0.10 ROHM : PMDTM JEDEC : SOD-128 : Manufacture Date
●Taping Dimensions (Unit : mm)
●Structure Cathode Anode
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ABSOLUTE MAXIMUM RATINGS
(Tl= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg●
ELECTRICAL CHARACTERISTICS
(Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Limits Unit Duty≦0.5 700 V Direct reverse vo
