ROHM Semiconductor RFN20T2DNZ
Super Fast Recovery Diode
| Part No. | RFN20T2DNZ |
|---|---|
| Datasheet | RFN20T2DNZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●Dimensions (Unit : mm) 10.0± 0.3 0.1 ߶3.2±0.2 4.5± 0.3 0.1 2.8± 0.2 0.1 0.4 0.2 15.0± 12.0±0.2 5.0±0.2 8.0±0.2
●
FEATURES
1) Cathode common dual type 2) Low VF 3) Low switching loss ① 1.2 1.3 0.8 (1) (2) (3) 2.54±0.5 2.54±0.5 ROHM : TO-220FN ① : Manufacture Date 14.0±0.5 2.6±0.5 0.75± 0.1 0.05●Structure (1) Anode (2) Cathode (3) Anode
●Construction Silicon epitaxial planar type
●Packing (Unit : mm) 7 540 34.5
●
ABSOLUTE MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage Average current Non-repetitive forward surge current Operating junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Duty≦0.5 200 Direct reverse voltage 60Hz half sin wave, resistive load, 1/2IO per diode Tc=95°C 60Hz half sin wave,one cycle non-repetitive at Tj=25°C, per diode - 200 20 100 150 - 55 to 150 V V A A °C °C●
ELECTRICAL CHARACTERISTICS
(Tj= 25°C, per diode) Parameter Symbol Conditions Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) IF=10A VR=200V IF=0.5A, IR=1A, Irr=0.25×IR Junction to case Min.
