ROHM Semiconductor RFN2L6S
Super Fast Recovery Diode
MAXIMUM RATINGS
(Tl= 25°C) Parameter Symbol 4.0±0.1 fφ 1.55 2.8MAX Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 600 V Reverse voltage VR Direct voltage Average current Io On glass epoxy substrate, 60Hz half sin wave , Resistive load Tl=89ºC Non-repetitive forward surge current IFSM 60Hz half sin wave, Non-repetitive at Tj=25ºC 600 1.5 40 V A A Operating junction temperature Tj - 150 °C Storage temperature Tst