ROHM Semiconductor RFN2LAM4STF
Super Fast Recovery Diode
| Part No. | RFN2LAM4STF |
|---|---|
| Datasheet | RFN2LAM4STF Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification PMDTM●
FEATURES
1) Low forward voltage 2) Low switching loss 3) High current overload capacity (2) 1.50±0.20 0.95±0.10 ROHM : PMDTM JEDEC : SOD-128 : Manufacture Date●Construction Silicon epitaxial planar type
●Taping Dimensions (Unit : mm)
●Structure Cathode Anode
●
ABSOLUTE MAXIMUM RATINGS
(Tl= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg●
ELECTRICAL CHARACTERISTICS
(Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Limits Unit Duty≦0.5 400 V Direct reverse voltage Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, non-repetitive at Tj=25ºC Tｌ=102°C - 400 1.5 50 150 V A A °C - 55 to 150 °C Conditions IF=1.5A VR=400V IF=0.5A, IR=1A, Irr=0.25×IR Junction to lead Min. Typ. Max. Unit 0.65 0.88 1.2 V - - 1 A - 22 30 ns - - 25 °C/W © 2017 ROHM Co., Ltd.
