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RFN5BM6S - Super Fast Recovery Diode

Key Features

  • 1) Low switching loss 2) Low forward voltage.
  • Construction Silicon epitaxial planar type 1.6 1.6 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date.
  • Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 TO-252 2.3 2.3.
  • Structure Cathode φ1.55±0.1 　　1.　5　5　00.1 Open Anode 0.4±0.1 2.5±0.1 TL 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 φ3.30.00±.10.1 2.7±0.2.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits.

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Datasheet Details

Part number RFN5BM6S
Manufacturer ROHM
File Size 485.52 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN5BM6S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RFN5BM6S Datasheet Serise Standard Fast Recovery Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification Features 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type 1.6 1.6 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 TO-252 2.3 2.3 Structure Cathode φ1.55±0.1 　　1.　5　5　00.1 Open Anode 0.4±0.1 2.5±0.1 TL 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 φ3.30.00±.10.1 2.7±0.2 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.