ROHM Semiconductor RFN5TF8S
Super Fast Recovery Diode
| Part No. | RFN5TF8S |
|---|---|
| Datasheet | RFN5TF8S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions Duty䍺0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=106°C 60Hz half sin wave , Non-repetitive at Tj=25°C Conditions IF=5A VR=800V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. 䠉 䠉 䠉 䠉 Limits 800 800 5 60 150 55 to 150 Typ. Max. 1.6 2.1 0.05 10 20 40 䠉 3.5 Unit V V A A °C °C Unit V μA ns °C/W WWW ROHM COM Ú 2/(- #O ,TD !LL RIGHTS RESERVED 1/4 2012.06 - Rev.A RFN5TF8S Data Sheet FORWARD CURRENT:IF(A) FORWARD VOLTAGE:VF(mV) 100 10 Tj=150°C Tj=125°C Tj=75°C 1 Tj=25°C 0.1 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1800 1750 1700 1650 1600 1550 1500 1450 1400 IF=5A Tj=25°C AVE:...
