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RFU10TF6S - Super Fast Recovery Diode

Features

  • 1)Single type. (TO-220) 2)Ultra High switching speed.
  • Construction Silicon epitaxial plnner (1) (3).
  • Absolute maximum ratings(Tc=25 C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=50 C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25  C Limits 600.

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Datasheet Details

Part number RFU10TF6S
Manufacturer ROHM
File Size 326.92 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFU10TF6S Datasheet

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www.DataSheet4U.com Super Fast Recovery Diode RFU10TF6S Series Ultra Fast Recovery Dimentions(Unit : mm) Structure Applications General rectification (1) (3) Features 1)Single type.(TO-220) 2)Ultra High switching speed Construction Silicon epitaxial plnner (1) (3) Absolute maximum ratings(Tc=25 C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≦0.
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