ROHM Semiconductor RFU10TF6S
Super Fast Recovery Diode
| Part No. | RFU10TF6S |
|---|---|
| Datasheet | RFU10TF6S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification (1) (3)●
FEATURES
1)Single type.(TO-220) 2)Ultra High switching speed●Construction Silicon epitaxial plnner (1) (3)
●Absolute maximum ratings(Tc=25 C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=50 C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C Limits 600 600 10 100 150 -55 to +150 Unit V V A A C C
●Electrical characteristics(Tj=25 C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to case Min. - Typ. 2.3 0.03 16 - Max. 2.8 10 25 3.5 Unit V μA ns C / W ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RFU10TF6S
●Electrical characteristics curves Data Sheet 100 Tj=125 C FOR...
