ROHM Semiconductor RFUS20TM4S
Super Fast Recovery Diode
| Part No. | RFUS20TM4S |
|---|---|
| Datasheet | RFUS20TM4S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1)Ultra low switching loss 2)High current overload capacity 3)Cathode common single type +0.4 −0.2●
APPLICATIONS
General rectification (1) (2) (3)●Construction Silicon epitaxial planer +0.1 −0.05
●Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Forward current surge peak Junction temperature Storage temperature Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=68C Limits 430 430 20 100 150 -55to+150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C
●Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) Conditions IF=20A VR=430V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.4 0.05 24 - Max. 1.6 10 35 2 Unit V μA ns C/W ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RFUS20TM4S Data Sheet
●Elect...
