ROHM Semiconductor RFUS20TM6S
Super Fast Recovery Diode
| Part No. | RFUS20TM6S |
|---|---|
| Datasheet | RFUS20TM6S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●
FEATURES
1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05●Construction Silicon epitaxial planar
●Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg +0.4 -0.2 (1) (2) (3) Conditions Duty≦0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 600 600 20 100 150 -55 to 150 Tc=50C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Unit V V A A C C
●Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=20A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. 2.3 0.05 23 － Max. 2.8 10 35 1.8 Unit V μA ns C / W ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A RFUS20TM6S
●Electrical chara...
