Absolute maximum ratings (Tc=25C) Parameter
Repetitive peak reverse voltage Reverse voltage Average rectified forward current
Forward current surge peak
Junction temperature Storage temperature
Symbol VRM VR Io
IFSM
Tj Tstg
Conditions Duty 0.5 Direct voltage 60Hz half sin wave, R.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Super Fast Recovery Diode
RFX10TF6S
Series Ultra Fast Recovery
Dimensions (Unit : mm)
+0.3 -0.1
Applications General rectification
RFX10 TF6S
+0.3 -0.1
+0.2 -0.1
Features 1)Single type.(TO-220) 2)High switching speed 3)Soft Recovery
Construction Silicon epitaxial planer
(1) (3)
+0.1 -0.05
+0.4 -0.2
for
Data Sheet
Structure
(1) (3)
NotNeRewcDoemsimgennsde 1.6MdAX
Absolute maximum ratings (Tc=25C) Parameter
Repetitive peak reverse voltage Reverse voltage Average rectified forward current
Forward current surge peak
Junction temperature Storage temperature
Symbol VRM VR Io
IFSM
Tj Tstg
Conditions Duty 0.