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RFX10TF6S - Super Fast Recovery Diode

Key Features

  • 1)Single type. (TO-220) 2)High switching speed 3)Soft Recovery.
  • Construction Silicon epitaxial planer (1) (3) +0.1 -0.05 +0.4 -0.2 for Data Sheet.
  • Structure (1) (3) NotNeRewcDoemsimgennsde 1.6MdAX.
  • Absolute maximum ratings (Tc=25C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty  0.5 Direct voltage 60Hz half sin wave, R.

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Datasheet Details

Part number RFX10TF6S
Manufacturer ROHM
File Size 388.00 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFX10TF6S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RFX10TF6S Series Ultra Fast Recovery Dimensions (Unit : mm) +0.3 -0.1 Applications General rectification RFX10 TF6S +0.3 -0.1 +0.2 -0.1 Features 1)Single type.(TO-220) 2)High switching speed 3)Soft Recovery Construction Silicon epitaxial planer (1) (3) +0.1 -0.05 +0.4 -0.2 for Data Sheet Structure (1) (3) NotNeRewcDoemsimgennsde 1.6MdAX Absolute maximum ratings (Tc=25C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty  0.