ROHM Semiconductor RGCL80TS60
Field Stop Trench IGBT
| Part No. | RGCL80TS60 |
|---|---|
| Datasheet | RGCL80TS60 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Field Stop Trench IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 600 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 PD PD 65 40 160 148 74 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 Unit V V A A A W W °C °C © 2015 ROHM Co., Ltd. All rights reserved. 1/9 2015.09 - Rev.A RGCL80TS60 lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Data Sheet Symbol Rθ(j-c) Values Min. Typ. Max. Unit - - 1.01 °C/W lIGBTELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 600 - - Unit V Collector Cut - off Current ICES VCE = 600V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA Gate - Emitter Threshol...
