ROHM Semiconductor RGPR30BM40
Ignition IGBT
| Part No. | RGPR30BM40 |
|---|---|
| Datasheet | RGPR30BM40 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Ignition IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Emitter-Collector Voltage (VGE = 0V) Gate - Emitter Voltage Collector Current Tj = 25°C Avalanche Energy (Single Pulse) Tj = 150°C Power Dissipation Operating Junction Temperature Storage Temperature VCES VEC VGES IC EAS EAS*2 PD Tj Tstg 430 25 10 30 300 180 125 -40 to +175 -55 to +175 V V V A mJ mJ W °C °C © 2017 ROHM Co., Ltd. All rights reserved. 1/9 2017.05 - Rev.A RGPR30BM40 lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Min. Typ. Max. Unit - - 1.20 °C/W lElectrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Emitter - Collector Breakdown Voltage Symbol Conditions BVCES IC = 2mA, VGE = 0V Tj = 25°C Tj = -40 to 175°C*2 Min. 370 365 BVEC IC = -10mA, VGE = 0V 25 Values Typ. 400 35 Max. 430 435 - Unit V V V Gate - Emitter Breakdown Voltage Collector Cut - o...
