ROHM Semiconductor RGS00TS65HR
Field Stop Trench IGBT
| Part No. | RGS00TS65HR |
|---|---|
| Datasheet | RGS00TS65HR Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Field Stop Trench IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 PD PD Tj 88 50 150 326 163 -40 to +175 A A A W W °C Storage Temperature Tstg -55 to +175 °C *1 Pulse width limited by Tjmax. © 2019 ROHM Co., Ltd. All rights reserved. 1/9 2019.02 - Rev.A RGS00TS65HR lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Min. Typ. Max. - - 0.46 Unit C/W lIGBTELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - Collector Cut - off Current VCE = 650V, VGE = 0V, ICES Tj = 25℃ Tj = 175℃*2 - - Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - Max. - 10 5 ±200 Gate - Emit...
