ROHM Semiconductor RGS50TSX2DHR
Field Stop Trench IGBT
FEATURES
1) Low Collector - Emitter Saturation Voltage 2) Short Circuit Withstand Time 10μs 3) Qualified to AEC-Q101 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant●Application General Inverter for Automotive and Industrial Use (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD
●Packaging Specifications Packaging Reel Size (mm) Tape Width (mm) Type Basic Ordering Unit (pcs) Tube - 450 Packing Code C11 Marking RGS50TSX2D
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ABSOLUTE MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 1200 ±30 50 25 75 50 25 75 395 197 -40 to +175 -55 to +175 V V A A A A A A W W °C °C © 2018 ROHM Co., Ltd.