ROHM Semiconductor RGS80TSX2D
1200V 40A Field Stop Trench IGBT
| Part No. | RGS80TSX2D |
|---|---|
| Datasheet | RGS80TSX2D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 1200V 40A Field Stop Trench IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 1200 V ±30 V 80 A 40 A 120 A 80 A 40 A 120 A 555 W 277 W -40 to +175 °C -55 to +175 °C © 2020 ROHM Co., Ltd. All rights reserved. 1/11 2020.09 - Rev.C RGS80TSX2D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Unit Min. Typ. Max. - - 0.27 C/W - - 0.56 C/W lIGBTELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 1...
