ROHM Semiconductor RGTH80TS65GC13
650V 40A Field Stop Trench IGBT
| Part No. | RGTH80TS65GC13 |
|---|---|
| Datasheet | RGTH80TS65GC13 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 650V 40A Field Stop Trench IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V Collector Current TC = 25°C IC TC = 100°C IC Pulsed Collector Current ICP*1 Power Dissipation TC = 25°C PD TC = 100°C PD 70 A 40 A 160 A 234 W 117 W Operating Junction Temperature Tj -40 to +175 °C Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 °C © 2020 ROHM Co., Ltd. All rights reserved. 1/9 2020.09 - Rev.D RGTH80TS65GC13 lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Datasheet Symbol Rθ(j-c) Values Unit Min. Typ. Max. - - 0.64 °C/W lIGBTELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA Gate - Emitter Thre...
