ROHM Semiconductor RGTV60TS65D
Field Stop Trench IGBT
FEATURES
1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant●Outline TO-247N
●Inner Circuit (2) (1)(2)(3) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD
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APPLICATIONS
Solar Inverter UPS Welding IH PFC●Packaging Specifications Packaging Tube Reel Size (mm) - Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGTV60TS65D
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ABSOLUTE MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limi