ROHM Semiconductor RGWSX2TS65D
650V 60A Field Stop Trench IGBT
| Part No. | RGWSX2TS65D |
|---|---|
| Datasheet | RGWSX2TS65D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 650V 60A Field Stop Trench IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj ±30 V 104 A 64 A 180 A 23 A 13 A 60 A 288 W 144 W -40 to +175 °C Storage Temperature Tstg -55 to +175 °C *1 Pulse width limited by Tjmax. © 2021 ROHM Co., Ltd. All rights reserved. 1/11 2021.08 - Rev.A RGWSX2TS65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Unit Min. Typ. Max. - - 0.52 C/W - - 2.88 C/W lIGBTELECTRICAL CHARACTERISTICS
(at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 6...
