RHU002N06 - Switching (60V/ 200mA)

Features

1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) (1) 0.65 0.65 0.3 (3) 1.25 2.1 0.15 0.2 (2) 0.1Min. zStructure Silicon N-channel MOSFET transistor 0~0.1 Each lead has same dimensions Abbreviated symbol : KP ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 0.7 0.9 1.3 2.0 (1) Source (2) Gate (3) Drain zEquivalent circuit (3) (2) ∗Gate Protection Diod.

Rohm

Datasheet Details

Part number	RHU002N06
Manufacturer	ROHM
File Size	62.91 KB
Description	Switching (60V/ 200mA)
Datasheet	RHU002N06 Datasheet
Additional preview pages of the RHU002N06 datasheet.

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Full PDF Text Transcription

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RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 zFeatures 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) (1) 0.65 0.65 0.3 (3) 1.25 2.1 0.15 0.2 (2) 0.1Min. zStructure Silicon N-channel MOSFET transistor 0~0.1 Each lead has same dimensions Abbreviated symbol : KP ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 0.7 0.9 1.3 2.0 (1) Source (2) Gate (3) Drain zEquivalent circuit (3) (2) ∗Gate Protection Diode. (1) (1) Source (2) Gate (3) Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use.

Published: Apr 16, 2005 |