RJK005N03 Datasheet | ROHM

.. Transistors 2.5V Drive Nch MOS FET RJK005N03 z Structure Silicon N-channel MOS FET z External dimensions (Unit : mm) SMT3 2.9 1.1 0.4 (3) z Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 z Applications Switching z Packaging specifications and h FE Package Type RJK005N03 Code Basic ordering unit (pieces) Taping T146 3000 (1)Source (2)Gate (3)Drain Each lead has same dimensions Abbreviated symbol : KV z Inner circuit (3) 0.3Min. (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain z Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a remended land Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 ±12 ±500 ±2.0 200 800 200 150 - 55 to +150 Unit V V m A A m A m A m W °C °C z Thermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a remended land Symbol Rth(ch-a) ∗ Limits 625 Unit °C/W 1/2 Transistors z Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS...