RJU002N06 Datasheet | ROHM

.. Transistors 2.5V Drive Nch MOS FET RJU002N06 z Structure Silicon N-channel MOS FET z External dimensions (Unit : mm) UMT3 0.3 z Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (3) (2) (1) 0.65 0.65 1.3 0.15 z Applications Switching z Packaging specifications Package Type RJU002N06 Code Basic ordering unit (pieces) Taping T106 3000 (1) Source (2) Gate (3) Drain Each lead has same dimensions Abbreviated symbol : ML z Inner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain z Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a remended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits 60 ±12 ±200 ±800 200 150 - 55 to +150 Unit V V m A m A m W °C °C z Thermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a remended land Symbol Rth(ch-a) ∗ Limits 625 Unit °C/W 0.1Min. 1/2 Transistors z Electrical characteristics...