Datasheet Summary
Transistors
Switching (60V, 300mA)
!Features
1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. !External dimensions (Units : mm)
0.95 0.95 0.15
(3)
(2) (1)
1.3 2.4
!Structure Silicon N-channel MOSFET transistor
0~0.1
0.2Min.
Each lead has same dimensions
ROHM : SST3 EIAJ : SOT-23
Abbreviated symbol : RKS
(1) Source (2) Gate (3) Drain
!Equivalent circuit
(3)
(2)
∗Gate Protection Diode.
(1)
∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the...
