ROHM Semiconductor RN262CS
PIN diode
PIN diode RN262CS zApplications High frequency switching zDimensions (Unit : mm) zLand size figure (Unit : mm) 0.55 0.45 0.45 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (CT). VMN2 zStructure zConstruction Silicon epitaxial planar zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage Forward current Power dissipation VR IF Pd Junction temperature Tj Storage temperature Tstg Limits 30 100 100 150 -55 to +150 Unit V mA mW °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF - - 1 IR - - 0.1 Ct - - 0.4 High frequency resistance Rf - - 2.8 - - 1.5 Unit Conditions V IF=10mA µA VR=30V pF VR=1V , f=1MHz Ω IF=3mA,f=100MHz Ω IF=10mA,f=100MHz ©2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.A RN266CS Data Sheet REVERSE CURRENT:IR(nA)