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RQ1E050RP
Pch -30V -5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-30V 31mΩ ±5A 1.5W
lFeatures
1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8). 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
180
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
8 3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
Marking
UD
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30 V
Continuous drain current
ID ±5 A
Pulsed drain current
ID,pulse*1
±20
A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 1.5 W PD*3 0.