ROHM Semiconductor RQ5E025SN
Small Signal MOSFET
RQ5E025SN Nch 30V 2.5A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 70mΩ ±2.5A 1.0W lFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating ; RoHS compliant lOutline SOT-346T SC-96 TSMT3 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) QY Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID ±2.5 A Pulsed drain current IDP*1 ±10 A Gate - Source voltage VGSS ±20 V Power dissipation PD*2 1.0 W PD*3 0.7 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170316 - Rev.002 RQ5E025SN lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 RthJA*3 Values Min.