ROHM Semiconductor RQ6E085BN
Power MOSFET
| Part No. | RQ6E085BN |
|---|---|
| Datasheet | RQ6E085BN Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
RQ6E085BN Nch 30V 8.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 14.4mΩ ±8.5A 1.25W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant lOutline SOT-457T SC-95 TSMT6 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Taping code TCR Marking AB lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*4 PD*5 Tj Tstg 30 ±8.5 ±18 ±20 8.5 25.8 1.25 0.95 150 -55 to +150 V A A V A mJ W W ℃ ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.001 RQ6E085BN lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*4 RthJA*5 Values Min.
