ROHM Semiconductor RSD050N06FRA
MOSFET
FEATURES
1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy.●
APPLICATIONS
Switching Data Sheet AEC-Q101 Qualified● Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428>
●Packaging specifications Package Type Code Basic ordering unit (pieces) CPT3 TL 2500
●Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 60 20 5.0 15 5.0 15 15 150 55 to +150 *1 Pw10s, Duty cycle1% *2 Tc=25°C Unit V V A A A A W °C °C
● Inner circuit ∗1 (1) Gate (2) Drain (3) Source ∗2 1 ESD Protection Diode 2 Body Diode (1) (2) (3)
●Thermal resistance Parameter Channel to Case * Tc=25C S