ROHM Semiconductor RSD175N10FRA
Power MOSFET
| Part No. | RSD175N10FRA |
|---|---|
| Datasheet | RSD175N10FRA Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
RSD175N10FRA Nch 100V 17.5A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 100V 105mΩ ±17.5A 20W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lOutline TO-252 SC-63 CPT3 lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) 175N10 Parameter Symbol Value Unit Drain - Source voltage VDSS 100 V Continuous drain current ID*1 ±17.5 A Pulsed drain current IDP*2 ±35 A Gate - Source voltage VGSS ±20 V Power dissipation PD*3 20 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170706 - Rev.001 RSD175N10FRA lThermal resistance Parameter Thermal resistance, junction - case Datasheet Symbol RthJC*3 Values Min.
