RSD200N05FRA Datasheet PDF

4V Drive Nch MOSFET RSD200N05FRA zStructure Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. zApplication Switching Data Sheet AEC-Q101 Qualified z Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428> zPackaging specifications Package Type Code Basic ordering unit (pieces) RSD200N05FRA Taping TL 2500 { z Absolute maximum ratings (Ta = 25qC) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 45 r20 r20 r40 16 40 20 150 55 to 150 *1 Pwᱨ10Ps, Duty cycleᱨ1% *2 Tc=25qC Unit V V A A A A W qC qC z Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE zThermal resistance Parameter Channel to Case * Tc=25qC Symbol Rth (ch-c)* Limi