RSD200N10 - 4V Drive Nch MOSFET

ROHM

Key Features

1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy.

RSD200N10 4v drive nch mosfet by ROHM - Datasheet Preview

Datasheet Details

Part number	RSD200N10
Manufacturer	ROHM
File Size	185.44 KB
Description	4V Drive Nch MOSFET
Datasheet	RSD200N10 Datasheet

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4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy.