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RSD200N10 - 4V Drive Nch MOSFET

Datasheet Summary

Features

  • 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy.

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Datasheet preview – RSD200N10

Datasheet Details

Part number RSD200N10
Manufacturer ROHM
File Size 185.44 KB
Description 4V Drive Nch MOSFET
Datasheet download datasheet RSD200N10 Datasheet
Additional preview pages of the RSD200N10 datasheet.

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Full PDF Text Transcription

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4V Drive Nch MOSFET RSD200N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy.
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