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2.5V Drive Nch MOSFET
RSE002N06
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
EMT3
1.6 0.3 0.7 0.55
Features 1) High speed switing. 2) Small package(EMT3). 3) Low voltage drive(2.5V drive).
(1)Source (2)Gate (3)Drain
(3)
0.8
(2) (1)
1.6
0.2 0.5 0.5 1.0
0.2
0.15
Abbreviated symbol : RK
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RSE002N06 Taping TL 3000
Inner circuit
(3)
0.1Min.
∗2 (2)
∗1
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.