The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PRODUCTS SOP8
TYPE
RSH140N03
1.TYPE
RSH140N03
2.STRUCTURE
SILICON N-CHANNEL MOS FET
3.APPLICATIONS SWITCHING
4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃]
DRAIN-SOURCE VOLTAGE
VDSS 30V
PAGE 1/4
GATE-SOURCE VOLTAGE
VGSS ‚20V
DRAIN CURRENT CONTINUOUS ID
‚14A
PULSED
IDP ‚56A PW 10μs , Duty cycle 1%
SOURCE CURRENT CONTINUOUS IS (BODY DIODE)
1.6A
PULSED
ISP 6.4A PW 10μs , Duty cycle 1%
POWER DISSIPATION CHANNEL TEMPERATURE
PD 2.0W MOUNTED ON A CERAMIC BOARD
Tch 150℃
RANGE OF STORAGE TEMPERATURE Tstg -55~150℃
5.THERMAL RESISTANCE CHANNEL TO AMBIENT
Rth(ch-a) 62.5℃/W MOUNTED ON A CERAMIC BOARD
DESIGN
CHECK APPROVAL DATE: 23/OCT/2009 SPECIFICATION No. Q03080-RSH140N03
TSZ22111・04・002
REV.: 0
PRODUCTS SOP8
TYPE
RSH140N03
PAGE 2/4
6.