RSU002P03 Description
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 zStructure Silicon P-channel MOSFET zDimensions (Unit : 1/4 RSU002P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 0.2 Forward...