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RSX1001T3 - Shottky barrier diode

Features

  • 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planer (1) (2) (3).
  • Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (.
  • 1) Forward current surge peak (60Hz / 1cyc) (.
  • 1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 10 150 150 -40 to +150 Unit V V A A C C (.
  • 1)Business frequencies, Rating of R-load, 1/2.

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Datasheet Details

Part number RSX1001T3
Manufacturer ROHM
File Size 337.57 KB
Description Shottky barrier diode
Datasheet download datasheet RSX1001T3 Datasheet

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www.DataSheet4U.com Schottky barrier diode RSX1001T3 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 10 150 150 -40 to +150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR jc Min. - Typ. - Max. 0.45 500 2.
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