RTL030P02 Datasheet | ROHM

Features 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) !External dimensions (Unit : mm) TUMT6 2.0±0.1 0.1 0.3 + - 0.05 (6) (5) (4) 2.1±0.1 1.7±0.1 0~0.1 (1) (2) (3) !Applications DC-DC converter (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain 1pin mark 0.65 0.65 1.3±0.1 0.17±0.05 Each lead has same dimensions Abbreviated symbol : WN !Structure Silicon P-channel MOS FET !Equivalent circuit (6) (5) (4) ∗2 !Packaging specifications Package Type RTL030P02 Code Basic ordering unit (pieces) Taping TR 3000 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain 0.2MAX 0.85MAX 0.77±0.05 1/4 Transistors !Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits - 20 ±12 ±3 ±12 - 0.8 - 12 1 150 - 55 to +150 Unit V V A A A A W °C...