Overview: www.DataSheet4U.com RTQ035N03
Transistors 2.5V Drive Nch MOS FET
RTQ035N03
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TSMT6
1.0MAX 0.85 0.7 (1) (2) (3) 1pin mark 0.4 0.16 zApplications Switching zPackaging specifications
Package Type RTQ035N03 Code Basic ordering unit (pieces) Taping TR 3000 Each lead has same dimensions Abbreviated symbol : QP zInner circuit
(6)
(5)
(4) ∗2 ∗1
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±3.5 ±15 1.0 4.0 1.25 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W 0.3~0.
