Overview: www.DataSheet4U.com 2.5V Drive Nch MOSFET
RTR025N05
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
TSMT3
1.0MAX 2.9 0.4 0.85 0.7 (1) (2) 0.95 0.95 1.9 0.16 (1) Gate (2) Source Each lead has same dimensions Abbreviated symbol : PW zApplication Switching (3) Drain zPackaging specifications
Package Type RTR025N05 Code Basic ordering unit (pieces) Taping TL 3000 zInner circuit
(3) ∗2 (1) zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 45 ±12 ±2.5 ±10 0.8 10 1.0 150 −55 to +150 Unit V V A A A A W °C °C ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Source (3) Drain Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance
Parameter Channel to ambient
∗ When mounted on a ceramic board Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W www.rohm.com
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