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1.2V Drive Nch MOSFET
RUC002N05
Structure Silicon N-channel MOSFET
Features 1) High speed switing. 2) Small package(SST3). 3)Ultra low voltage drive(1.2V drive).
Application Switching
Dimensions (Unit : mm)
SST3
Abbreviated symbol : RH
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RUC002N05
Taping T116 3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2 Tch Tstg
50 8 200 800 150 800 200 150 55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.