RUS100N02 Datasheet PDF

RUS100N02 Nch 20V 10A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 20V 12mΩ ±10A 2.0W lFeatures 1) Low on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-free lead plating ; RoHS compliant. lOutline SOP8 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking RUS100N02 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID ID,pulse*1 VGSS PD*2 Tj Tstg 20 ±10 ±36 ±10 2.0 150 -55 to +150 V A A V W ℃ ℃ © 2014 ROHM Co., Ltd. All rights reserved. 1/11 20141001 - Rev.001 RUS100N02 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 Values Min. Typ. Max. - 62.5 - Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol C...