ROHM Semiconductor RV3C001ZP
Power MOSFET
| Part No. | RV3C001ZP |
|---|---|
| Datasheet | RV3C001ZP Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
RV3C001ZP Pch -20V -100mA Small Signal MOSFET TENTATIVE Data Sheet VDSS RDS(on) (Max.) ID PD -20V 3.8W -100mA 100mW lFeatures 1) Ultra Small Package (0.6×0.4×0.36mm) 2) Low voltage drive (-1.2V) makes this device ideal for partable equipment. 3) Drive circuits can be simple. 4) Built-in ESD Protection Diode. lApplication Switching lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline VML0604 lInner circuit (1) Gate (2) Source (3) Drain *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 8,000 T2L RX Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 Tj Tstg Value -20 100 400 10 100 150 -55 to +150 Unit V mA mA V mW °C °C lThermal resistance Parameter Thermal resistance, junction - ambient Sym
