RV3C002UN Datasheet PDF

RV3C002UN Nch 20V 150mA Small Signal MOSFET TENTATIVE Data Sheet VDSS RDS(on) (Max.) ID PD 20V 2.0W 150mA 100mW lFeatures 1) Ultra Small Package (0.6×0.4×0.36mm) 2) Low voltage drive (1.2V) makes this device ideal for partable equipment. 3) Drive circuits can be simple. 4) Built-in ESD Protection Diode. lApplication Switching lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline VML0604 lInner circuit (1) Gate (2) Source (3) Drain *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 8,000 T2CL RY Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 Tj Tstg Value 20 150 600 10 100 150 -55 to +150 Unit V mA mA V mW °C °C lThermal resistance Parameter Thermal resistance, junction - ambient Symbol R