RW1A025ZP - 1.5V Drive Pch MOSFET

ROHM

Key Features

1) Low On-resistance. 2) High power package. 3) Low voltage drive. (1.5v).

RW1A025ZP 1.5v drive pch mosfet by ROHM - Datasheet Preview

Datasheet Details

Part number	RW1A025ZP
Manufacturer	ROHM
File Size	357.88 KB
Description	1.5V Drive Pch MOSFET
Datasheet	RW1A025ZP Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
RW1025G	Dot Matrix 32x4 LCD Controller / Driver	RockWorks
RW1063-0A-001	16COM/40SEG DRIVER & CONTROLLER	RockWorks
RW1067	34COM/80SEG DRIVER & CONTROLLER	RockWorks
RW1067C-0B-002	34COM/80SEG DRIVER & CONTROLLER	RockWorks
RW1067C-0C-003	34COM/80SEG DRIVER&CONTROLLER	RockWorks

Other Datasheets by ROHM

Part Number	Description
RW1A020ZP	1.5V Drive Pch MOSFET
RW1A013ZP	Pch -12V -1.3A Power MOSFET
RW1C015UN	Nch 20V 1.5A Power MOSFET
RW1C020UN	Nch 20V 2A Power MOSFET
RW1E014SN	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1.5V Drive Pch MOSFET RW1A025ZP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package. 3) Low voltage drive.(1.5v)  Application Switching  Dimensions (Unit : mm) WEMT6 (6) (5) (4) Abbreviated symbol : ZF  Packaging specifications Package Type Code Basic ordering unit (pieces) RW1A025ZP Taping T2R 8000 ○  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 12 VGSS 10 ID 2.5 IDP *1 IS 10 0.5 ISP *1 10 PD *2 0.7 Tch 150 Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.