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RW1A025ZP Datasheet PDF

ROHM Semiconductor RW1A025ZP

1.5V Drive Pch MOSFET

Part No. RW1A025ZP
Datasheet RW1A025ZP Download
Manufacturer
ROHM Semiconductor
Description 1.5V Drive Pch MOSFET
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RW1A025ZP datasheet page 1 preview

FEATURES

1) Low On-resistance. 2) High power package. 3) Low voltage drive.(1.5v)
● Application Switching
● Dimensions (Unit : mm) WEMT6 (6) (5) (4) Abbreviated symbol : ZF
● Packaging specifications Package Type Code Basic ordering unit (pieces) RW1A025ZP Taping T2R 8000 ○
● Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 12 VGSS 10 ID 2.5 IDP *1 IS 10 0.5 ISP *1 10 PD *2 0.7 Tch 150 Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C
● Inner circuit (6) (5) (4) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
● Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 179 Unit C / W ©2010 ROHM Co., Ltd. All rights reserved.
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