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1.5V Drive Pch MOSFET
RW1A025ZP
Structure Silicon P-channel MOSFET
Features 1) Low On-resistance. 2) High power package. 3) Low voltage drive.(1.5v)
Application Switching
Dimensions (Unit : mm)
WEMT6
(6) (5) (4)
Abbreviated symbol : ZF
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RW1A025ZP
Taping T2R 8000 ○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
12
VGSS
10
ID 2.5
IDP *1 IS
10 0.5
ISP *1
10
PD *2
0.7
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.