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RW4E045AT Datasheet PDF

ROHM Semiconductor RW4E045AT

Power MOSFET

Part No. RW4E045AT
Datasheet RW4E045AT Download
Manufacturer
ROHM Semiconductor
Description Power MOSFET
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RW4E045AT datasheet page 1 preview
RW4E045AT Pch -30V -4.5A Power MOSFET Datasheet lOutline VDSS -30V DFN1616-7T RDS(on)(Max.) 48mΩ ID ±4.5A HEML1616L7 PD 1.5W lFeatures 1) Low on - resistance 2) High power small mold package (HEML1616L7) 3) Pb-free plating ; RoHS compliant 4) Halogen free lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 DC/DC converter Taping code TCL1 Battery switch Marking WG lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS -30 V Continuous drain current ID ±4.5 A Pulsed drain current IDP*1 ±18 A Gate - Source voltage VGSS ±20 V Power dissipation PD*2 1.5 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20200227 - Rev.001 RW4E045AT lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 Values Unit Min.
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